Vishay Dual TrenchFET Gen IV 2 N-Channel MOSFET, 48 A, 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ240DT-T1-GE3

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RS庫存編號:
200-6852
製造零件編號:
SiZ240DT-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAIR 3 x 3S

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00805Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

33W

Typical Gate Charge Qg @ Vgs

15.2nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Length

3.4mm

Height

800μm

Width

3.4mm

Number of Elements per Chip

2

Automotive Standard

No

The Vishay SiZ240DT-T1-GE3 is a dual N-channel 40V (D-S) MOSFETs.

TrenchFET Gen IV power MOSFETs

Integrated MOSFET half-bridge power stage

100 % Rg and UIS tested

Optimized Qgs/Qgs ratio improves switching characteristics

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