製造零件編號

Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8

RS庫存編號:: 228-2909
製造零件編號:: SiR681DP-T1-RE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD124,500.00

(不含稅)

TWD130,740.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 3,000 件從 2026年1月01日起發貨

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單位	每單位	每卷*
3000 - 3000	TWD41.50	TWD124,500.00
6000 +	TWD40.00	TWD120,000.00

* 參考價格

RS庫存編號:: 228-2909
製造零件編號:: SiR681DP-T1-RE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	71.9A
	Maximum Drain Source Voltage Vds	80V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	11.2mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	104W
	Typical Gate Charge Qg @ Vgs	69.4nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 71.9A
	Maximum Drain Source Voltage Vds 80V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 11.2mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 104W
	Typical Gate Charge Qg @ Vgs 69.4nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiR681DP-T1-RE3

The Vishay TrenchFET P-channel is 80 V MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8

訂單超過 $1,300.00 免費送貨

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