Vishay TrenchFET Type N-Channel MOSFET, 80.3 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR186LDP-T1-RE3
- RS庫存編號:
- 228-2896
- 製造零件編號:
- SiR186LDP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
暫時無法供應
抱歉,我們不知道何時會到貨。
- RS庫存編號:
- 228-2896
- 製造零件編號:
- SiR186LDP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0044Ω | |
| Channel Mode | Enhancement | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0044Ω | ||
Channel Mode Enhancement | ||
The Vishay TrenchFET N-channel is 60 V MOSFET.
100 % Rg and UIS tested
相關連結
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR186LDP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIR680DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3
