Vishay TrenchFET Type N-Channel MOSFET, 81.2 A, 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3
- RS庫存編號:
- 228-2892
- 製造零件編號:
- SIJA74DP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
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查看批量定價選項小計（1 包，共 10 件）*
TWD333.00
(不含稅)
TWD349.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 6,000 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD33.30 | TWD333.00 |
| 50 - 90 | TWD32.60 | TWD326.00 |
| 100 - 240 | TWD31.80 | TWD318.00 |
| 250 - 990 | TWD30.80 | TWD308.00 |
| 1000 + | TWD30.20 | TWD302.00 |
* 參考價格
- RS庫存編號:
- 228-2892
- 製造零件編號:
- SIJA74DP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 81.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 3.99mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Power Dissipation Pd | 46.2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 81.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 3.99mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Power Dissipation Pd 46.2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 40 V MOSFET.
100 % Rg and UIS tested
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