製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3

RS庫存編號:: 228-2887
製造零件編號:: SiJ450DP-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3

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小計（1 包，共 5 件）*

TWD195.00

(不含稅)

TWD204.75

訂單超過 $1,300.00 免費送貨

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單位	每單位	每包*
5 - 45	TWD39.00	TWD195.00
50 - 95	TWD38.20	TWD191.00
100 - 245	TWD37.00	TWD185.00
250 - 995	TWD36.40	TWD182.00
1000 +	TWD35.40	TWD177.00

* 參考價格

RS庫存編號:: 228-2887
製造零件編號:: SiJ450DP-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	113A
	Maximum Drain Source Voltage Vds	45V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.9mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	48W
	Typical Gate Charge Qg @ Vgs	75.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 113A
	Maximum Drain Source Voltage Vds 45V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.9mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 48W
	Typical Gate Charge Qg @ Vgs 75.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiJ450DP-T1-GE3

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3

訂單超過 $1,300.00 免費送貨

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