製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8

RS庫存編號:: 228-2886
製造零件編號:: SiJ450DP-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD65,400.00

(不含稅)

TWD68,670.00

訂單超過 $1,300.00 免費送貨

有庫存

3,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD21.80	TWD65,400.00
15000 +	TWD21.10	TWD63,300.00

* 參考價格

RS庫存編號:: 228-2886
製造零件編號:: SiJ450DP-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	113A
	Maximum Drain Source Voltage Vds	45V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.9mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	75.5nC
	Maximum Power Dissipation Pd	48W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 113A
	Maximum Drain Source Voltage Vds 45V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.9mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 75.5nC
	Maximum Power Dissipation Pd 48W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiJ450DP-T1-GE3

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8

訂單超過 $1,300.00 免費送貨

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