Vishay N-Channel 100 V Type N-Channel MOSFET, 150 A, 100 V, 3-Pin TO-220
- RS庫存編號:
- 225-9971
- 製造零件編號:
- SUP70042E-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 500 件）*
TWD27,000.00
(不含稅)
TWD28,350.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月29日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 500 - 2000 | TWD54.00 | TWD27,000.00 |
| 2500 + | TWD52.40 | TWD26,200.00 |
* 參考價格
- RS庫存編號:
- 225-9971
- 製造零件編號:
- SUP70042E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | N-Channel 100 V | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.65mm | |
| Standards/Approvals | No | |
| Width | 10.51 mm | |
| Length | 29.51mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series N-Channel 100 V | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Height 4.65mm | ||
Standards/Approvals No | ||
Width 10.51 mm | ||
Length 29.51mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET power MOSFET
Maximum 175 °C junction temperature
Very low Qgd reduces power loss from passing through V(plateau)
100 % Rg and UIS tested
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