Vishay N-Channel 150 V Type N-Channel MOSFET, 70.2 A, 150 V, 8-Pin SO-8 SiR578DP-T1-RE3
- RS庫存編號:
- 225-9930
- 製造零件編號:
- SiR578DP-T1-RE3
- 製造商:
- Vishay
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TWD370.00
(不含稅)
TWD388.50
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD74.00 | TWD370.00 |
| 50 - 95 | TWD72.20 | TWD361.00 |
| 100 - 245 | TWD70.00 | TWD350.00 |
| 250 - 995 | TWD68.20 | TWD341.00 |
| 1000 + | TWD66.60 | TWD333.00 |
* 參考價格
- RS庫存編號:
- 225-9930
- 製造零件編號:
- SiR578DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70.2A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | N-Channel 150 V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 92.5W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Width | 1.12 mm | |
| Height | 5.26mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70.2A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series N-Channel 150 V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 92.5W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Width 1.12 mm | ||
Height 5.26mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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