Vishay EF Type N-Channel Power MOSFET, 13 A, 800 V, 3-Pin TO-247AC

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TWD1,709.00

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125 +TWD61.80TWD1,545.00

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RS庫存編號:
225-9913
製造零件編號:
SIHG15N80AEF-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247AC

Series

EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

350mΩ

Typical Gate Charge Qg @ Vgs

53nC

Maximum Power Dissipation Pd

156W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Length

6.73mm

Height

10.41mm

Width

2.39mm

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 13A Drain Current - SIHG15N80AEF-GE3


This power MOSFET is a silicon N‑channel transistor designed for high‑voltage switching and power conversion in industrial environments. It is intended for surface‑mounted assemblies requiring robust drain‑to‑source voltage handling and elevated operating temperatures, making it suitable for demanding electrical and mechanical control systems.

Features and Benefits:


• 800V rating enables high‑voltage switching applications • 13A continuous current supports substantial load drive • 350mΩ Rds(on) reduces conduction losses in power paths • 53nC typical gate charge allows predictable switching control • 156W power dissipation permits sustained thermal loading • 30V maximum gate stress protects gate‑drive circuitry

Applications


• Suitable for high‑voltage inverters in automation systems • Ideal for power supplies in industrial control equipment • Used for motor‑drive switching in electrical assemblies • Can be used for snubber and clamp networks in power electronics

What temperature range can it operate within?


It functions across a broad span from -55°C up to 150°C, enabling use in varied thermal environments.

How is it packaged for mounting on assemblies?


It comes in a TO‑247AC enclosure configured for surface‑mount installation with three connection pins.

What gate drive considerations are relevant for switching?


The gate must be driven within ±30V limits and sized to handle a typical 53nC charge for controlled switching transitions.

How does the device manage power under load?


It can dissipate up to 156W when properly cooled, allowing continuous operation at rated current with adequate thermal management.

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