Infineon IPT010N08NM5 Type N-Channel MOSFET, 43 A, 80 V, 8-Pin HSOF
- RS庫存編號:
- 225-0581
- 製造零件編號:
- IPT010N08NM5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2000 件）*
TWD243,800.00
(不含稅)
TWD256,000.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月26日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 8000 | TWD121.90 | TWD243,800.00 |
| 10000 + | TWD118.20 | TWD236,400.00 |
* 參考價格
- RS庫存編號:
- 225-0581
- 製造零件編號:
- IPT010N08NM5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSOF | |
| Series | IPT010N08NM5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Width | 10.58 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSOF | ||
Series IPT010N08NM5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Width 10.58 mm | ||
Automotive Standard No | ||
The Infineon IPT010N08NM5 is the single N-channel OptiMOS 5 power MOSFET 80V 1.05mΩ 425A in a TOLL package. The OptiMOS 5 silicon technology is new generation of power MOSFETs and is specially designed for synchronous rectification for telecom and server power supplies.
Increased power density
Low voltage overshoot
Less paralleling required
Highest system efficiency
Reduced switching and conduction losses
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