Infineon HEXFET Type N-Channel MOSFET, 345 A, 60 V, 8-Pin DirectFET AUIRF7749L2TR
- RS庫存編號:
- 223-8455
- 製造零件編號:
- AUIRF7749L2TR
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 2 件）*
TWD425.00
(不含稅)
TWD446.24
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 3,828 件從 2026年1月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD212.50 | TWD425.00 |
| 10 - 98 | TWD207.50 | TWD415.00 |
| 100 - 248 | TWD202.00 | TWD404.00 |
| 250 - 498 | TWD197.00 | TWD394.00 |
| 500 + | TWD192.50 | TWD385.00 |
* 參考價格
- RS庫存編號:
- 223-8455
- 製造零件編號:
- AUIRF7749L2TR
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 345A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Power Dissipation Pd | 341W | |
| Maximum Gate Source Voltage Vgs | 60 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 345A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Power Dissipation Pd 341W | ||
Maximum Gate Source Voltage Vgs 60 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon single N-channel HEXFET power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows this MOSFET to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications.
Advanced process technology
Exceptionally small footprint and low profile
High power density
Low parasitic parameters
Dual sided cooling
175°C Operating temperature
Lead free
RoHS compliant
Halogen free
Automotive qualified
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