Infineon IPT60R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 8-Pin HSOF
- RS庫存編號:
- 222-4939
- 製造零件編號:
- IPT60R080G7XTMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2000 件）*
TWD209,200.00
(不含稅)
TWD219,660.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月23日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 8000 | TWD104.60 | TWD209,200.00 |
| 10000 + | TWD102.50 | TWD205,000.00 |
* 參考價格
- RS庫存編號:
- 222-4939
- 製造零件編號:
- IPT60R080G7XTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPT60R | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 167W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.58 mm | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPT60R | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 167W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 10.58 mm | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
Enables best-in-class R DS(on) in smallest footprint
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