製造零件編號

Infineon IPS70R Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251 IPS70R600P7SAKMA1

RS庫存編號:: 222-4934
製造零件編號:: IPS70R600P7SAKMA1
製造商:: Infineon

Infineon IPS70R Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251 IPS70R600P7SAKMA1

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小計（1 包，共 20 件）*

TWD204.00

(不含稅)

TWD214.20

訂單超過 $1,300.00 免費送貨

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單位	每單位	每包*
20 - 20	TWD10.20	TWD204.00
40 - 80	TWD10.00	TWD200.00
100 - 220	TWD9.70	TWD194.00
240 - 480	TWD9.50	TWD190.00
500 +	TWD9.30	TWD186.00

* 參考價格

RS庫存編號:: 222-4934
製造零件編號:: IPS70R600P7SAKMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8.5A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-251
	Series	IPS70R
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	43.1W
	Typical Gate Charge Qg @ Vgs	10.5nC
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Standards/Approvals	No
	Height	6.22mm
	Width	2.4 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8.5A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-251
	Series IPS70R
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 43.1W
	Typical Gate Charge Qg @ Vgs 10.5nC
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Standards/Approvals No
	Height 6.22mm
	Width 2.4 mm
	Automotive Standard No

Datasheet - IPS70R600P7SAKMA1

The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

Infineon IPS70R Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251 IPS70R600P7SAKMA1

訂單超過 $1,300.00 免費送貨

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