Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1
- RS庫存編號:
- 222-4713
- 製造零件編號:
- IPSA70R600P7SAKMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD438.00
(不含稅)
TWD460.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月27日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 20 | TWD21.90 | TWD438.00 |
| 40 - 80 | TWD21.40 | TWD428.00 |
| 100 - 220 | TWD20.80 | TWD416.00 |
| 240 - 480 | TWD20.30 | TWD406.00 |
| 500 + | TWD19.80 | TWD396.00 |
* 參考價格
- RS庫存編號:
- 222-4713
- 製造零件編號:
- IPSA70R600P7SAKMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Power Dissipation Pd | 43.1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 6.1mm | |
| Width | 2.38 mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Power Dissipation Pd 43.1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 6.1mm | ||
Width 2.38 mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
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