Infineon IPL60R Type N-Channel MOSFET, 28 A, 650 V Enhancement, 5-Pin ThinPAK IPL65R070C7AUMA1
- RS庫存編號:
- 222-4918
- 製造零件編號:
- IPL65R070C7AUMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 2 件）*
TWD295.00
(不含稅)
TWD309.76
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD147.50 | TWD295.00 |
| 10 - 98 | TWD144.00 | TWD288.00 |
| 100 - 248 | TWD140.00 | TWD280.00 |
| 250 - 498 | TWD137.50 | TWD275.00 |
| 500 + | TWD134.50 | TWD269.00 |
* 參考價格
- RS庫存編號:
- 222-4918
- 製造零件編號:
- IPL65R070C7AUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ThinPAK | |
| Series | IPL60R | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 169W | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ThinPAK | ||
Series IPL60R | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 169W | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
12 years manufacturing experience in superjunction technology
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