Infineon IPL Type N-Channel MOSFET, 29 A, 650 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R095CFD7AUMA1
- RS庫存編號:
- 240-6615
- 製造零件編號:
- IPL65R095CFD7AUMA1
- 製造商:
- Infineon
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TWD134.00
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TWD140.70
(含稅)
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* 參考價格
- RS庫存編號:
- 240-6615
- 製造零件編號:
- IPL65R095CFD7AUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPL | |
| Package Type | ThinPAK 8x8 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 171W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPL | ||
Package Type ThinPAK 8x8 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 171W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V CoolMOS™ CFD7 super junction MOSFET comes in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Significantly reduced switching losses compared to competition
Extra safety margin for designs with increased bus voltage
Improved full-load efficiency in industrial SMPS applications
High power density
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