製造零件編號

Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1

RS庫存編號:: 222-4902
製造零件編號:: IPD60R180C7ATMA1
製造商:: Infineon

Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1

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小計（1 包，共 5 件）*

TWD426.00

(不含稅)

TWD447.30

訂單超過 $1,300.00 免費送貨

有庫存

加上 1,495 件從 2026年1月12日起發貨

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單位	每單位	每包*
5 - 5	TWD85.20	TWD426.00
10 - 95	TWD83.00	TWD415.00
100 - 245	TWD81.00	TWD405.00
250 - 495	TWD79.00	TWD395.00
500 +	TWD77.00	TWD385.00

* 參考價格

RS庫存編號:: 222-4902
製造零件編號:: IPD60R180C7ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Series	IPD50R
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	180mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	68W
	Forward Voltage Vf	0.9V
	Standards/Approvals	No
	Height	2.41mm
	Width	6.22 mm
	Length	6.73mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Series IPD50R
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 180mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 68W
	Forward Voltage Vf 0.9V
	Standards/Approvals No
	Height 2.41mm
	Width 6.22 mm
	Length 6.73mm
	Automotive Standard No

Datasheet - IPD60R180C7ATMA1

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Enables increasing switching frequency without loss in efficiency

Measure showing key parameter for light load and full load efficiency

Doubling the switching frequency will half the size of magnetic components

Smaller packages for same R DS(on)

Can be used in many more positions for both hard and soft switching topologies

Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1

訂單超過 $1,300.00 免費送貨

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