製造零件編號

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

RS庫存編號:: 222-4899
製造零件編號:: IPD50R800CEAUMA1
製造商:: Infineon

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD22,750.00

(不含稅)

TWD23,900.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 5,000 件從 2026年1月19日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2500 - 10000	TWD9.10	TWD22,750.00
12500 +	TWD8.80	TWD22,000.00

* 參考價格

RS庫存編號:: 222-4899
製造零件編號:: IPD50R800CEAUMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Series	IPD50R
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	40W
	Typical Gate Charge Qg @ Vgs	12.4nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.83V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Standards/Approvals	No
	Height	2.41mm
	Width	6.22 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Series IPD50R
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 40W
	Typical Gate Charge Qg @ Vgs 12.4nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.83V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Standards/Approvals No
	Height 2.41mm
	Width 6.22 mm
	Automotive Standard No

Datasheet - IPD50R800CEAUMA1

The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Reduced energy stored in output capacitance (E oss)

High body diode ruggedness

Reduced reverse recovery charge (Q rr )

Reduced gate charge (Q g )

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

訂單超過 $1,300.00 免費送貨

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