Name: Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252
Brand: Infineon
SKU: 222-4899
Price: 9.56 TWD
Availability: Discontinued

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-252
	Series	IPD50R
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12.4nC
	Forward Voltage Vf	0.83V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	40W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.73mm
	Height	2.41mm
	Width	6.22 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-252
	Series IPD50R
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12.4nC
	Forward Voltage Vf 0.83V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 40W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.73mm
	Height 2.41mm
	Width 6.22 mm
	Automotive Standard No

Datasheet - IPD50R800CEAUMA1

The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Reduced energy stored in output capacitance (E oss)

High body diode ruggedness

Reduced reverse recovery charge (Q rr )

Reduced gate charge (Q g )

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

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