製造零件編號

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1

RS庫存編號:: 222-4900
製造零件編號:: IPD50R800CEAUMA1
製造商:: Infineon

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1

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可享批量折扣

小計（1 包，共 25 件）*

TWD362.50

(不含稅)

TWD380.50

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每包*
25 - 25	TWD14.50	TWD362.50
50 - 75	TWD14.10	TWD352.50
100 - 225	TWD13.80	TWD345.00
250 - 475	TWD13.40	TWD335.00
500 +	TWD13.10	TWD327.50

* 參考價格

RS庫存編號:: 222-4900
製造零件編號:: IPD50R800CEAUMA1
製造商:: Infineon

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-252
	Series	IPD50R
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12.4nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.83V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	40W
	Maximum Operating Temperature	150°C
	Width	6.22 mm
	Height	2.41mm
	Standards/Approvals	No
	Length	6.73mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-252
	Series IPD50R
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12.4nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.83V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 40W
	Maximum Operating Temperature 150°C
	Width 6.22 mm
	Height 2.41mm
	Standards/Approvals No
	Length 6.73mm
	Automotive Standard No

Datasheet - IPD50R800CEAUMA1

The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Reduced energy stored in output capacitance (E oss)

High body diode ruggedness

Reduced reverse recovery charge (Q rr )

Reduced gate charge (Q g )

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1

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