製造零件編號

Infineon IPB60R Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263 IPB60R099C7ATMA1

RS庫存編號:: 222-4893
製造零件編號:: IPB60R099C7ATMA1
製造商:: Infineon

Infineon IPB60R Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263 IPB60R099C7ATMA1

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可享批量折扣

小計（1 包，共 2 件）*

TWD295.00

(不含稅)

TWD309.76

訂單超過 $1,300.00 免費送貨

有庫存

3,050 件準備從其他地點送貨

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單位	每單位	每包*
2 - 8	TWD147.50	TWD295.00
10 - 98	TWD143.50	TWD287.00
100 - 248	TWD140.50	TWD281.00
250 - 498	TWD136.00	TWD272.00
500 +	TWD126.50	TWD253.00

* 參考價格

RS庫存編號:: 222-4893
製造零件編號:: IPB60R099C7ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	IPB60R
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series IPB60R
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB60R099C7ATMA1

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

Infineon IPB60R Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263 IPB60R099C7ATMA1

訂單超過 $1,300.00 免費送貨

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