Infineon CoolMOS Type N-Channel MOSFET, 11.4 A, 600 V Enhancement, 3-Pin TO-263 IPB65R310CFDAATMA1

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  • 2026年5月26日 發貨
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250 - 495TWD84.20TWD421.00
500 +TWD78.40TWD392.00

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包裝方式:
RS庫存編號:
222-4660
製造零件編號:
IPB65R310CFDAATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.4A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

310mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

AEC Q101 qualified

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