Infineon CoolMOS Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 217-2509
- 製造零件編號:
- IPB80N04S2H4ATMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD47,300.00
(不含稅)
TWD49,660.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 6,000 件從 2026年1月12日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD47.30 | TWD47,300.00 |
| 2000 + | TWD46.40 | TWD46,400.00 |
* 參考價格
- RS庫存編號:
- 217-2509
- 製造零件編號:
- IPB80N04S2H4ATMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | CoolMOS | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 129W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.45 mm | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series CoolMOS | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 129W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 9.45 mm | ||
Length 10.31mm | ||
Height 4.57mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon 40V, N-Ch, 3.7 mΩ max, Automotive MOSFET, D2PAK, OptiMO.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Ultra low Rds(on)
100% Avalanche tested
Green product (RoHS compliant)
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