製造零件編號

Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-263

RS庫存編號:: 222-4653
製造零件編號:: IPB60R099P7ATMA1
製造商:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 1000 件）*

TWD59,600.00

(不含稅)

TWD62,580.00

訂單超過 $1,300.00 免費送貨

有庫存

3,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1000 - 1000	TWD59.60	TWD59,600.00
2000 +	TWD57.90	TWD57,900.00

* 參考價格

RS庫存編號:: 222-4653
製造零件編號:: IPB60R099P7ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB60R099P7ATMA1

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns

Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg

Best in class RDS(on) /package

Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-263

訂單超過 $1,300.00 免費送貨

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