製造零件編號

Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-263 IPB65R110CFDAATMA1

RS庫存編號:: 222-4656
製造零件編號:: IPB65R110CFDAATMA1
製造商:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-263 IPB65R110CFDAATMA1

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小計（1 包，共 2 件）*

TWD326.00

(不含稅)

TWD342.30

訂單超過 $1,300.00 免費送貨

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單位	每單位	每包*
2 - 8	TWD163.00	TWD326.00
10 - 98	TWD159.50	TWD319.00
100 - 248	TWD154.50	TWD309.00
250 - 498	TWD151.50	TWD303.00
500 +	TWD147.00	TWD294.00

* 參考價格

RS庫存編號:: 222-4656
製造零件編號:: IPB65R110CFDAATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	31.2A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 31.2A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB65R110CFDAATMA1

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Ultra fast body diode

Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-263 IPB65R110CFDAATMA1

訂單超過 $1,300.00 免費送貨

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