Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-220 IPP65R110CFDAAKSA1
- RS庫存編號:
- 222-4707
- 製造零件編號:
- IPP65R110CFDAAKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD218.00
(不含稅)
TWD228.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月07日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD109.00 | TWD218.00 |
| 10 - 98 | TWD106.00 | TWD212.00 |
| 100 - 248 | TWD104.00 | TWD208.00 |
| 250 - 498 | TWD102.00 | TWD204.00 |
| 500 + | TWD100.00 | TWD200.00 |
* 參考價格
- RS庫存編號:
- 222-4707
- 製造零件編號:
- IPP65R110CFDAAKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 277.8W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Width | 15.95 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 277.8W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Width 15.95 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
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