製造零件編號

Infineon IPB60R Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263

RS庫存編號:: 222-4890
製造零件編號:: IPB60R090CFD7ATMA1
製造商:: Infineon

Infineon IPB60R Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 1000 件）*

TWD78,000.00

(不含稅)

TWD81,900.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月16日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1000 - 4000	TWD78.00	TWD78,000.00
5000 +	TWD76.40	TWD76,400.00

* 參考價格

RS庫存編號:: 222-4890
製造零件編號:: IPB60R090CFD7ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	IPB60R
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series IPB60R
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB60R090CFD7ATMA1

The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R090CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and EOSS

Best-in-class RDS(on)/package combinations

Infineon IPB60R Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263

訂單超過 $1,300.00 免費送貨

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