製造零件編號

Infineon IMW1 Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247

RS庫存編號:: 222-4855
製造零件編號:: IMW120R060M1HXKSA1
製造商:: Infineon

Infineon IMW1 Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 30 件）*

TWD5,463.00

(不含稅)

TWD5,736.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 30 件從 2026年1月12日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
30 - 60	TWD182.10	TWD5,463.00
90 - 120	TWD178.40	TWD5,352.00
150 +	TWD174.90	TWD5,247.00

* 參考價格

RS庫存編號:: 222-4855
製造零件編號:: IMW120R060M1HXKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	1200V
	Series	IMW1
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 1200V
	Series IMW1
	Package Type TO-247
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMW120R060M1HXKSA1

The Infineon CoolSiC™ 1200 V, 60 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

Temperature independent turn-off switching losses

Infineon IMW1 Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247

訂單超過 $1,300.00 免費送貨

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