Infineon OptiMOS-TM5 N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1
- RS庫存編號:
- 222-4620
- 製造零件編號:
- BSC072N08NS5ATMA1
- 製造商:
- Infineon
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TWD552.00
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD55.20 | TWD552.00 |
| 20 - 90 | TWD53.80 | TWD538.00 |
| 100 - 240 | TWD52.40 | TWD524.00 |
| 250 - 490 | TWD51.40 | TWD514.00 |
| 500 + | TWD47.50 | TWD475.00 |
* 參考價格
- RS庫存編號:
- 222-4620
- 製造零件編號:
- BSC072N08NS5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TDSON | |
| Series | OptiMOS-TM5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 69W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1mm | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TDSON | ||
Series OptiMOS-TM5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 69W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.1mm | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Automotive Standard No | ||
Infineon OptiMOS-TM5 Series MOSFET, 80V Maximum Drain Source Voltage, 74A Maximum Continuous Drain Current - BSC072N08NS5ATMA1
This MOSFET is a high-current N-channel semiconductor designed for switching and power conversion in demanding thermal environments. It operates across a wide temperature span and accepts gate voltages up to 20 V, making it suitable for applications requiring robust gate drive and substantial continuous drain current while mounted as a Compact surface device.
Features and Benefits:
• 80 V drain rating enables higher-voltage switching applications
• 74 A continuous current supports heavy-load power stages
• 7.2 mΩ Rds(on) reduces conduction losses during operation
• 69 W power dissipation allows sustained thermal loading
• 24 nC typical gate charge for predictable switching behaviour
• 8-pin TDSON surface package provides Compact PCB real-estate savings
• 74 A continuous current supports heavy-load power stages
• 7.2 mΩ Rds(on) reduces conduction losses during operation
• 69 W power dissipation allows sustained thermal loading
• 24 nC typical gate charge for predictable switching behaviour
• 8-pin TDSON surface package provides Compact PCB real-estate savings
Applications
• Suitable for high-current motor drive stages
• Ideal for DC-DC converter output stages
• Used with power distribution modules in server racks
• Can be used for battery management and charging systems
• Used for synchronous rectification in power supplies
• Ideal for DC-DC converter output stages
• Used with power distribution modules in server racks
• Can be used for battery management and charging systems
• Used for synchronous rectification in power supplies
What thermal extremes can it tolerate during operation?
It is rated to operate from −55 °C up to 150 °C.
What gate drive voltage range is permissible for switching control?
The gate may be driven up to 20 V to switch the device.
How does the package support automated assembly?
It is supplied in an 8-pin TDSON package intended for surface mounting.
What is the typical switching charge to consider in gate drivers?
Designers should account for a typical total gate charge of 24 nC when selecting a driver.
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