Infineon OptiMOS-TM5 N-Channel MOSFET, 131 A, 80 V Enhancement, 8-Pin TDSON BSC037N08NS5ATMA1
- RS庫存編號:
- 222-4617
- 製造零件編號:
- BSC037N08NS5ATMA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 卷，共 5000 件）*
TWD174,000.00
(不含稅)
TWD182,700.00
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD34.80 | TWD174,000.00 |
| 10000 + | TWD33.80 | TWD169,000.00 |
* 參考價格
- RS庫存編號:
- 222-4617
- 製造零件編號:
- BSC037N08NS5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 131A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS-TM5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 114W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +175°C | |
| Width | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 131A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS-TM5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 114W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +175°C | ||
Width 6.1mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
Infineon OptiMOS-TM5 Series MOSFET, 80V Maximum Drain Source Voltage, 131A Maximum Continuous Drain Current - BSC037N08NS5ATMA1
This MOSFET is a high-current N-channel enhancement device designed for surface-mount power conversion and switching tasks. It operates across a wide ambient range and accommodates demanding thermal conditions while providing low voltage drop and Rapid gate-driven switching suitable for industrial and power-supply environments.
Features and Benefits:
• 80V drain rating enabling robust high-voltage switching
• 131A continuous drain current for heavy current handling
• 3.7mΩ low Rds(on) reducing conduction losses
• 114W power dissipation allowing sustained thermal load
• 46nC typical gate charge supporting fast switching control
• 20V gate tolerance permitting flexible drive voltages
• 131A continuous drain current for heavy current handling
• 3.7mΩ low Rds(on) reducing conduction losses
• 114W power dissipation allowing sustained thermal load
• 46nC typical gate charge supporting fast switching control
• 20V gate tolerance permitting flexible drive voltages
Applications
• Suitable for high-power DC-DC converters in power supplies
• Ideal for synchronous rectification in server power rails
• Used for motor-drive stages requiring high continuous current
• Can be used for telecoms power distribution and UPS units
• Suitable for Compact surface-mount power modules in industrial systems
• Ideal for synchronous rectification in server power rails
• Used for motor-drive stages requiring high continuous current
• Can be used for telecoms power distribution and UPS units
• Suitable for Compact surface-mount power modules in industrial systems
What temperature extremes can the device tolerate during operation?
It is specified to operate from -55°C up to +175°C.
How many electrical connections does the package provide for PCB layout?
The package exposes eight pins for routing and thermal connection.
What packaging and mounting form factor should designers expect?
It is supplied in a TDSON package intended for surface mounting.
What is the forward voltage during conduction under typical conditions?
The forward voltage is specified at 1.1V under conduction conditions.
What channel type and mode determine switching polarity and behaviour?
It uses an N-channel structure in enhancement mode for conventional high-side or low-side switching.
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