Infineon HEXFET Type N-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 AUIRFR9024NTRL
- RS庫存編號:
- 222-4616
- 製造零件編號:
- AUIRFR9024NTRL
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD523.00
(不含稅)
TWD549.20
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 3,390 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD52.30 | TWD523.00 |
| 20 - 90 | TWD50.90 | TWD509.00 |
| 100 - 240 | TWD49.70 | TWD497.00 |
| 250 - 490 | TWD48.70 | TWD487.00 |
| 500 + | TWD45.10 | TWD451.00 |
* 參考價格
- RS庫存編號:
- 222-4616
- 製造零件編號:
- AUIRFR9024NTRL
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.18mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.22mm | |
| Standards/Approvals | No | |
| Width | 6.73 mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.18mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 6.22mm | ||
Standards/Approvals No | ||
Width 6.73 mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
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