Infineon HEXFET Type P-Channel MOSFET, -11 A, -55 V Enhancement, 3-Pin TO-252 IRFR9024NTRLPBF
- RS庫存編號:
- 262-6770
- Distrelec 貨號:
- 304-41-678
- 製造零件編號:
- IRFR9024NTRLPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD545.00
(不含稅)
TWD572.25
(含稅)
添加 75 件 件可免費送貨
暫時缺貨
- 從 2026年5月18日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD21.80 | TWD545.00 |
| 50 - 75 | TWD21.40 | TWD535.00 |
| 100 - 225 | TWD19.70 | TWD492.50 |
| 250 - 975 | TWD19.20 | TWD480.00 |
| 1000 + | TWD17.80 | TWD445.00 |
* 參考價格
- RS庫存編號:
- 262-6770
- Distrelec 貨號:
- 304-41-678
- 製造零件編號:
- IRFR9024NTRLPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -11A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 38W | |
| Typical Gate Charge Qg @ Vgs | 12.7nC | |
| Forward Voltage Vf | -1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -11A | ||
Maximum Drain Source Voltage Vds -55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 38W | ||
Typical Gate Charge Qg @ Vgs 12.7nC | ||
Forward Voltage Vf -1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
Fast switching
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