DiodesZetex DMT Type N-Channel MOSFET, 75 A, 60 V Enhancement, 3-Pin TO-251
- RS庫存編號:
- 222-2882
- 製造零件編號:
- DMT69M5LH3
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 75 件）*
TWD1,027.50
(不含稅)
TWD1,078.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 75 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 75 - 75 | TWD13.70 | TWD1,027.50 |
| 150 - 450 | TWD13.40 | TWD1,005.00 |
| 525 + | TWD13.20 | TWD990.00 |
* 參考價格
- RS庫存編號:
- 222-2882
- 製造零件編號:
- DMT69M5LH3
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMT | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 96W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 28.4nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 6.1mm | |
| Width | 2.3 mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMT | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 96W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 28.4nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 6.1mm | ||
Width 2.3 mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low on-resistance
Low input capacitance
Small form factor thermally efficient package enables higher density end products
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