DiodesZetex DMT Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 6-Pin UDFN DMT6030LFCL-7
- RS庫存編號:
- 222-2879
- 製造零件編號:
- DMT6030LFCL-7
- 製造商:
- DiodesZetex
可享批量折扣
小計（1 包，共 25 件）*
TWD305.00
(不含稅)
TWD320.25
(含稅)
添加 125 件 件可免費送貨
最後的 RS 庫存
- 最終 2,800 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD12.20 | TWD305.00 |
| 50 - 75 | TWD11.80 | TWD295.00 |
| 100 - 225 | TWD11.60 | TWD290.00 |
| 250 - 975 | TWD11.30 | TWD282.50 |
| 1000 + | TWD11.00 | TWD275.00 |
* 參考價格
- RS庫存編號:
- 222-2879
- 製造零件編號:
- DMT6030LFCL-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | UDFN | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.58W | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.575 mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Length | 1.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type UDFN | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.58W | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 0.575 mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Length 1.6mm | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
PCB Footprint of 2.56mm2
Totally Lead-Free & Fully RoHS Compliant
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