DiodesZetex DMT Type N-Channel MOSFET, 14.1 A, 30 V Enhancement, 6-Pin UDFN DMT3006LFDFQ-7
- RS庫存編號:
- 222-2866
- 製造零件編號:
- DMT3006LFDFQ-7
- 製造商:
- DiodesZetex
可享批量折扣
小計（1 包，共 25 件）*
TWD275.00
(不含稅)
TWD288.75
(含稅)
添加 125 件 件可免費送貨
最後的 RS 庫存
- 最終 8,150 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD11.00 | TWD275.00 |
| 50 - 75 | TWD10.70 | TWD267.50 |
| 100 - 225 | TWD10.40 | TWD260.00 |
| 250 - 975 | TWD10.20 | TWD255.00 |
| 1000 + | TWD10.00 | TWD250.00 |
* 參考價格
- RS庫存編號:
- 222-2866
- 製造零件編號:
- DMT3006LFDFQ-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | UDFN | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.05mm | |
| Width | 2.05 mm | |
| Standards/Approvals | No | |
| Height | 0.63mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type UDFN | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 2.05mm | ||
Width 2.05 mm | ||
Standards/Approvals No | ||
Height 0.63mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant
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