DiodesZetex DMT Type N-Channel MOSFET, 16.1 A, 60 V Enhancement, 8-Pin VDFN DMT64M8LCG-7
- RS庫存編號:
- 222-2881
- 製造零件編號:
- DMT64M8LCG-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD280.00
(不含稅)
TWD294.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,620 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD28.00 | TWD280.00 |
| 50 - 90 | TWD27.30 | TWD273.00 |
| 100 - 240 | TWD26.60 | TWD266.00 |
| 250 - 990 | TWD25.90 | TWD259.00 |
| 1000 + | TWD25.40 | TWD254.00 |
* 參考價格
- RS庫存編號:
- 222-2881
- 製造零件編號:
- DMT64M8LCG-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | VDFN | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 47.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 2.16W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.8 mm | |
| Standards/Approvals | No | |
| Height | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type VDFN | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 47.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 2.16W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 0.8 mm | ||
Standards/Approvals No | ||
Height 3.3mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.
High Conversion Efficiency
Low RDS(ON)—Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
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