DiodesZetex Dual DMP Type P-Channel MOSFET, 3.1 A, 20 V Enhancement, 6-Pin UDFN-2020
- RS庫存編號:
- 222-2851
- 製造零件編號:
- DMP2045UFDB-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD12,900.00
(不含稅)
TWD13,560.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月28日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD4.30 | TWD12,900.00 |
| 15000 + | TWD4.10 | TWD12,300.00 |
* 參考價格
- RS庫存編號:
- 222-2851
- 製造零件編號:
- DMP2045UFDB-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMP | |
| Package Type | UDFN-2020 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.09Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -0.75V | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Power Dissipation Pd | 1.29W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMP | ||
Package Type UDFN-2020 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.09Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -0.75V | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Power Dissipation Pd 1.29W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
The DiodesZetex Dual P-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
PCB Footprint of 4mm2
Low On-Resistance
Low Input Capacitance
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