DiodesZetex DMP Type P-Channel MOSFET, 8.7 A, 12 V Enhancement, 6-Pin UDFN DMP1009UFDF-7
- RS庫存編號:
- 182-7286
- 製造零件編號:
- DMP1009UFDF-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD425.00
(不含稅)
TWD446.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 45,950 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | TWD8.50 | TWD425.00 |
| 750 - 1450 | TWD8.30 | TWD415.00 |
| 1500 + | TWD8.20 | TWD410.00 |
* 參考價格
- RS庫存編號:
- 182-7286
- 製造零件編號:
- DMP1009UFDF-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | UDFN | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.05 mm | |
| Length | 2.05mm | |
| Height | 0.58mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type UDFN | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 2.05 mm | ||
Length 2.05mm | ||
Height 0.58mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low On-Resistance
Fast Switching Speed
Applications
Battery Management Application
Power Management Functions
DC-DC Converters
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