onsemi NTP125N N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 NTP125N65S3H
- RS庫存編號:
- 221-6746
- 製造零件編號:
- NTP125N65S3H
- 製造商:
- onsemi
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TWD431.00
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD215.50 | TWD431.00 |
| 10 - 98 | TWD210.00 | TWD420.00 |
| 100 - 248 | TWD206.00 | TWD412.00 |
| 250 - 498 | TWD200.50 | TWD401.00 |
| 500 + | TWD196.00 | TWD392.00 |
* 參考價格
- RS庫存編號:
- 221-6746
- 製造零件編號:
- NTP125N65S3H
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTP125N | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 171W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free and are RoHS | |
| Length | 10.67mm | |
| Height | 16.3mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTP125N | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 171W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free and are RoHS | ||
Length 10.67mm | ||
Height 16.3mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 379 pF
100% avalanche tested
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