onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220 NTPF190N65S3HF

RS庫存編號:: 189-0401
製造零件編號:: NTPF190N65S3HF
製造商:: onsemi

onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220 NTPF190N65S3HF

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TWD372.00

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TWD390.60

訂單超過 $1,300.00 免費送貨

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RS庫存編號:: 189-0401
製造零件編號:: NTPF190N65S3HF
製造商:: onsemi

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	36W
	Typical Gate Charge Qg @ Vgs	34nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Height	16.12mm
	Width	4.9 mm
	Length	10.63mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 36W
	Typical Gate Charge Qg @ Vgs 34nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Height 16.12mm
	Width 4.9 mm
	Length 10.63mm
	Standards/Approvals No
	Automotive Standard No

Datasheet NTPF190N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 35 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)

Optimized Capacitance

Typ. RDS(on) = 161 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Computing

Consumer

Industrial

End Products

Notebook / Desktop computer / Game console

Telecom / Server

LED Lighting / Ballast

Adapter

onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220 NTPF190N65S3HF

訂單超過 $1,300.00 免費送貨

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