製造零件編號

onsemi NTBL050N65S Type N-Channel MOSFET, 49 A, 650 V Enhancement, 8-Pin H-PSOF NTBL050N65S3H

RS庫存編號:: 221-6706
製造零件編號:: NTBL050N65S3H
製造商:: onsemi

onsemi NTBL050N65S Type N-Channel MOSFET, 49 A, 650 V Enhancement, 8-Pin H-PSOF NTBL050N65S3H

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 2 件）*

TWD612.00

(不含稅)

TWD642.60

訂單超過 $1,300.00 免費送貨

供應短缺

1,990 件準備從其他地點送貨

我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。

單位	每單位	每包*
2 - 8	TWD306.00	TWD612.00
10 - 98	TWD298.00	TWD596.00
100 - 248	TWD291.00	TWD582.00
250 - 498	TWD284.00	TWD568.00
500 +	TWD277.00	TWD554.00

* 參考價格

RS庫存編號:: 221-6706
製造零件編號:: NTBL050N65S3H
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	650V
	Series	NTBL050N65S
	Package Type	H-PSOF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	305W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	98nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	11.47mm
	Length	10.8mm
	Width	2.4 mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 650V
	Series NTBL050N65S
	Package Type H-PSOF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 305W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 98nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 11.47mm
	Length 10.8mm
	Width 2.4 mm
	Automotive Standard No

Datasheet - NTBL050N65S3H

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 909 pF

100% avalanche tested

onsemi NTBL050N65S Type N-Channel MOSFET, 49 A, 650 V Enhancement, 8-Pin H-PSOF NTBL050N65S3H

訂單超過 $1,300.00 免費送貨

相關連結