onsemi NTBL050N65S Type N-Channel MOSFET, 49 A, 650 V Enhancement, 8-Pin H-PSOF NTBL050N65S3H
- RS庫存編號:
- 221-6706
- 製造零件編號:
- NTBL050N65S3H
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD677.00
(不含稅)
TWD710.84
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 1,940 件準備從其他地點送貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD338.50 | TWD677.00 |
| 10 - 98 | TWD329.50 | TWD659.00 |
| 100 - 248 | TWD322.00 | TWD644.00 |
| 250 - 498 | TWD314.00 | TWD628.00 |
| 500 + | TWD306.50 | TWD613.00 |
* 參考價格
- RS庫存編號:
- 221-6706
- 製造零件編號:
- NTBL050N65S3H
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTBL050N65S | |
| Package Type | H-PSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Power Dissipation Pd | 305W | |
| Maximum Operating Temperature | 175°C | |
| Height | 11.47mm | |
| Length | 10.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTBL050N65S | ||
Package Type H-PSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Power Dissipation Pd 305W | ||
Maximum Operating Temperature 175°C | ||
Height 11.47mm | ||
Length 10.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 909 pF
100% avalanche tested
相關連結
- onsemi NTBL050N65S Type N-Channel MOSFET 650 V Enhancement, 8-Pin H-PSOF
- onsemi FDBL Type N-Channel MOSFET 100 V Enhancement, 8-Pin H-PSOF
- onsemi FDBL Type N-Channel MOSFET 100 V Enhancement, 8-Pin H-PSOF FDBL86066-F085
- onsemi Type N-Channel MOSFET 80 V N, 8-Pin H-PSOF
- onsemi Type N-Channel MOSFET 80 V N, 8-Pin H-PSOF NVBLS1D7N08H
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R040M2HXTMA1
- onsemi NVMYS8D0N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS8D0N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK