Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN

RS庫存編號:: 220-7485
製造零件編號:: IRFH7932TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 4000 件）*

TWD69,600.00

(不含稅)

TWD73,080.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 8,000 件從 2026年1月05日起發貨

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單位	每單位	每卷*
4000 - 16000	TWD17.40	TWD69,600.00
20000 +	TWD16.90	TWD67,600.00

* 參考價格

RS庫存編號:: 220-7485
製造零件編號:: IRFH7932TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PQFN
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Power Dissipation Pd	3.4W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Width	5.1 mm
	Length	6.1mm
	Height	1mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 30V
	Package Type PQFN
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Power Dissipation Pd 3.4W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Width 5.1 mm
	Length 6.1mm
	Height 1mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFH7932TRPBF

The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Very low RDS(ON) at 4.5V VGS

Low Gate Charge

Fully Characterized Avalanche Voltage and

Current

100% Tested for RG

Lead-Free (Qualified up to 260°C Reflow)

RoHS compliant (Halogen Free)

Low Thermal Resistance

Large Source Lead for more reliable Soldering

Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN

訂單超過 $1,300.00 免費送貨

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