Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN IRFH7932TRPBF
- RS庫存編號:
- 220-7486
- 製造零件編號:
- IRFH7932TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 15 件）*
TWD394.50
(不含稅)
TWD414.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 9,435 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 990 | TWD26.30 | TWD394.50 |
| 1005 - 1980 | TWD25.70 | TWD385.50 |
| 1995 + | TWD24.10 | TWD361.50 |
* 參考價格
- RS庫存編號:
- 220-7486
- 製造零件編號:
- IRFH7932TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.4W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.1 mm | |
| Standards/Approvals | RoHS | |
| Length | 6.1mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.4W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 5.1 mm | ||
Standards/Approvals RoHS | ||
Length 6.1mm | ||
Height 1mm | ||
Automotive Standard No | ||
The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
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