Infineon HEXFET Type N-Channel MOSFET & Diode, 12 A, 30 V Enhancement, 8-Pin PQFN

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RS庫存編號:
220-7480
製造零件編號:
IRFH3707TRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

5.4nC

Maximum Power Dissipation Pd

2.8W

Maximum Operating Temperature

150°C

Standards/Approvals

Lead-Free, RoHS

Height

1mm

Width

3 mm

Length

3mm

Automotive Standard

No

The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount package

Potential alternative to high-RDS(on) SuperSO8 package

Wide availability from distribution partners

Industry standard qualification level

Standard pinout allows for drop in replacement

Small form factor

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