Infineon StrongIRFET Type N-Channel MOSFET & Diode, 363 A, 60 V Enhancement, 7-Pin TO-263 IRF60SC241ARMA1
- RS庫存編號:
- 220-7472
- 製造零件編號:
- IRF60SC241ARMA1
- 製造商:
- Infineon
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TWD207.00
(不含稅)
TWD217.36
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 198 | TWD103.50 | TWD207.00 |
| 200 - 398 | TWD101.50 | TWD203.00 |
| 400 + | TWD94.00 | TWD188.00 |
* 參考價格
- RS庫存編號:
- 220-7472
- 製造零件編號:
- IRF60SC241ARMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 363A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | StrongIRFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.95mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 311nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Width | 9.45 mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 363A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series StrongIRFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.95mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 311nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Width 9.45 mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon latest 60 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.
Low RDS(on)
High current capability
Industry standard package
Flexible pinout
Optimized for 10 V gate drive
Reduction in conduction losses
Increased power density
Drop in replacement to existing devices
Offers design flexibility
Provides immunity to false turn-on in noisy environments
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