Infineon StrongIRFET Type N-Channel MOSFET, 360 A, 40 V Enhancement, 7-Pin TO-263 IRF40SC240ARMA1
- RS庫存編號:
- 214-9123
- 製造零件編號:
- IRF40SC240ARMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD541.00
(不含稅)
TWD568.05
(含稅)
添加 15 件 件可免費送貨
有庫存
- 加上 2,990 件從 2026年2月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | TWD108.20 | TWD541.00 |
| 200 - 395 | TWD105.60 | TWD528.00 |
| 400 + | TWD98.60 | TWD493.00 |
* 參考價格
- RS庫存編號:
- 214-9123
- 製造零件編號:
- IRF40SC240ARMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | StrongIRFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 366nC | |
| Maximum Power Dissipation Pd | 417W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.45 mm | |
| Length | 10.2mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series StrongIRFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 366nC | ||
Maximum Power Dissipation Pd 417W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 9.45 mm | ||
Length 10.2mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon’s latest 40 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications. It offers design flexibility, with Industry standard packaging. It is capable of providing immunity to false turn-on in noisy environments.
It has 175°C operating temperature
High current carrying capability
相關連結
- Infineon StrongIRFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 IRFS7530TRL7PP
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 IRFS7534TRL7PP
- Infineon StrongIRFET Type N-Channel MOSFET & Diode 60 V Enhancement, 7-Pin TO-263
- Infineon StrongIRFET Type N-Channel MOSFET & Diode 60 V Enhancement, 7-Pin TO-263 IRF60SC241ARMA1
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IRFS7534TRLPBF