Infineon CoolMOS Type N-Channel MOSFET & Diode, 15 A, 900 V Enhancement, 3-Pin TO-263 IPB90R340C3ATMA2
- RS庫存編號:
- 220-7397
- 製造零件編號:
- IPB90R340C3ATMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD322.00
(不含稅)
TWD338.10
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 248 | TWD161.00 | TWD322.00 |
| 250 - 498 | TWD157.50 | TWD315.00 |
| 500 + | TWD154.50 | TWD309.00 |
* 參考價格
- RS庫存編號:
- 220-7397
- 製造零件編號:
- IPB90R340C3ATMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | CoolMOS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Width | 9.45 mm | |
| Height | 4.57mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series CoolMOS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Width 9.45 mm | ||
Height 4.57mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon 900V Cool MOS C3 is Infineon's third series of Cool MOS with market entry in 2001. C3 is the "working horse" of the portfolio.
Low specific on-state resistance (RDS(on)*A)
Very low energy storage in output capacitance (Eoss) @400V
Low gate charge (Qg)
Field proven Cool MOS™ quality
相關連結
- Infineon CoolMOS Type N-Channel MOSFET & Diode 900 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220 IPA95R450P7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement TO-263