Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 219-6016
- 製造零件編號:
- IPW60R024CFD7XKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD8,853.00
(不含稅)
TWD9,295.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 30 件從 2026年6月08日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD295.10 | TWD8,853.00 |
| 90 - 120 | TWD289.20 | TWD8,676.00 |
| 150 + | TWD283.40 | TWD8,502.00 |
* 參考價格
- RS庫存編號:
- 219-6016
- 製造零件編號:
- IPW60R024CFD7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS CSFD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Power Dissipation Pd | 320W | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Height | 5.21mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS CSFD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Power Dissipation Pd 320W | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Height 5.21mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
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