Infineon CoolMOS CSFD Type N-Channel MOSFET, 236 A, 650 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 219-6020
- 製造零件編號:
- IPW60R037CSFDXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD5,664.00
(不含稅)
TWD5,947.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月14日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD188.80 | TWD5,664.00 |
| 90 - 120 | TWD185.00 | TWD5,550.00 |
| 150 + | TWD181.30 | TWD5,439.00 |
* 參考價格
- RS庫存編號:
- 219-6020
- 製造零件編號:
- IPW60R037CSFDXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 236A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS CSFD | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Typical Gate Charge Qg @ Vgs | 136nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 236A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS CSFD | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Typical Gate Charge Qg @ Vgs 136nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon IPW60R037CSFD CoolMOS superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behaviour it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
相關連結
- Infineon CoolMOS CSFD Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R037CSFDXKSA1
- Infineon CoolMOS CSFD Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CSFD Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R024CFD7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R018CFD7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R170CFD7XKSA1