Infineon CoolMOS P7 N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1

RS庫存編號:: 219-5990
製造零件編號:: IPA95R1K2P7XKSA1
製造商:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1

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RS庫存編號:: 219-5990
製造零件編號:: IPA95R1K2P7XKSA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	950V
	Package Type	TO-220
	Series	CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	27W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 950V
	Package Type TO-220
	Series CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 27W
	Maximum Operating Temperature +150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA95R1K2P7XKSA1

Infineon CoolMOS P7 Series MOSFET, 950V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - IPA95R1K2P7XKSA1

This MOSFET is a high-voltage enhancement N‑channel transistor intended for power switching applications where sustained thermal and electrical performance is required. It operates across a wide ambient temperature range and is supplied in a through-hole TO‑220 package suited to mounted installations, delivering a balance of voltage handling, current capability and gate‑drive tolerance for use in power conversion and switching circuits.

Features and Benefits:

• 950 V rating enables high‑voltage switching applications
• 6 A continuous drain current supports moderate power loads
• 120 mΩ Rds(on) delivers low conduction losses during switching
• 27 W power dissipation allows sustained thermal loading
• 0.9 V forward voltage minimises Vf‑related conduction drop
• 30 V gate‑source rating permits common gate‑drive voltages

Applications

• Suitable for high‑voltage power supplies and converters
• Ideal for offline switch‑mode power supply primary side
• Used for industrial power switching and motor drivers
• Can be used for HV snubber and clamping circuits
• Used with power assemblies requiring TO‑220 mounting

What ambient temperature range can it tolerate?

It is specified to function between −55 °C and +150 °C.

How many pins and what mounting approach does it use?

It has three pins and is designed for through‑hole mounting in a TO‑220 package.

What channel mode and type does it employ?

It is an enhancement‑mode N‑channel device.

What is the maximum drain‑source voltage and its implication?

The maximum drain‑source voltage is 950 V, permitting use in high‑voltage circuits.

What electrical limits govern gate input?

The gate‑source voltage must not exceed 30 V.