製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRPBF

RS庫存編號:: 217-2622
製造零件編號:: IRFR3709ZTRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRPBF

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RS庫存編號:: 217-2622
製造零件編號:: IRFR3709ZTRPBF
製造商:: Infineon

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	86A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	8.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	17nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	79W
	Maximum Operating Temperature	175°C
	Length	6.37mm
	Standards/Approvals	No
	Height	2.39mm
	Width	6.22 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 86A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 8.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 17nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 79W
	Maximum Operating Temperature 175°C
	Length 6.37mm
	Standards/Approvals No
	Height 2.39mm
	Width 6.22 mm
	Automotive Standard No

Datasheet - IRFR3709ZTRPBF

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package.

Very Low RDS(on) at 4.5V VGS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

Infineon HEXFET Type N-Channel MOSFET, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRPBF

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